Abstract Electrical conductance is measured in amorphous SeTe films to investigate the crystallization mechanism in the system. The crystallization is found to occur at the sample-substrate interface. The Arrhenian temperature dependence of crystallization velocity estimates the activation energy. The Meyer-Neldel relation (MNR) has been observed in amorphous SeTe films through a correlation between pre-exponential of growth velocity and activation energy. The presence of localized states in amorphous chalcogenides and its relation to viscosity for controlling crystallization mechanism in films is discussed. PACS: 71.23.-k; 72.15.Cz; 73.61.Jc; 77.84.Bw Go to Introduction Crystallization in amorphous Se-Te binary and ternary alloys has been studied using various techniques such as Differential Scanning Calorimetry (DSC) [1], Differential Thermal Analysis (DTA) [2-3], Electron Microscopy [4-5] etc. The electrical conductivity has been previously used to determine t...
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